VBM1208N Product details
Product introduction:
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 200V | 20(±V) | 3V | 35A | 58 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS) (㊣V): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=10V: 58m次
- Rated drain current (ID): 35A
- Technology: Trench structure (Trench)
Package: TO220
Domain and module applications:
Example application:
1. **Power module**:
VBM1208N is suitable for switching power supplies, DC-DC converters and inverters in power modules. Due to its high rated drain-source voltage and drain current, it can be used in power systems of various power levels, such as industrial power supplies, telecommunications equipment and home appliances.
2. **Motor drive module**:
In the motor drive module, VBM1208N can be used as a power switching element in the motor controller. Its low drain-source on-resistance and high rated drain-source voltage allow it to withstand high voltages and high currents during motor startup while having low conduction losses, improving system efficiency.
3. **Charge and discharge module**:
In charge and discharge modules, VBM1208N can be used as power switches in battery management systems and chargers. Its high rated drain-source voltage and drain current characteristics allow it to withstand high voltages and currents during battery charging and discharging, and has a low conduction voltage drop, helping to improve charging and discharging efficiency and battery life. .
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image