Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
20V |
20（±V） |
0.5~1.5V |
100A |
5(mΩ) |
4 (mΩ) |
|
Trench |
Product model: VBM1206
Brand: VBsemi
parameter:
- Single N-type field effect transistor
- VDS (drain-source voltage): 20V
- VGS (gate-source voltage): ㊣20V
- Threshold voltage (Vth): 0.5~1.5V
- Drain-source resistance (m次) at VGS=2.5V: 5
- Drain-source resistance (m次) at VGS=4.5V: 4
- Maximum drain current (ID): 100A
- Technology: Trench
Package: TO220
Domain and module applications：
Application introduction and examples:
VBM1206 is suitable for high power and high current application scenarios, such as:
1. Power module: Due to its high drain current and low drain-source resistance, VBM1206 can be used as a switching power supply module for industrial equipment, communication base stations and other occasions that require high power output.
2. Electric vehicle module: In the controller of electric vehicles or electric bicycles, VBM1206 can be used as the power switch tube of the drive motor to control the start, stop and speed of the motor to achieve precise control of the electric vehicle.
3. Industrial automation module: In industrial automation systems, VBM1206 can be used as a current sensor and switching device to control and monitor the current and power of various industrial equipment to improve production efficiency and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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