Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO220 |
Single-N |
100V |
20(±V) |
1.8V |
70A |
|
|
17 (mΩ) |
Trench |
Product model: VBM1102N
Brand: VBsemi
parameter:
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- On-resistance (m次) when gate-source voltage is 10V: 17m次
- Maximum drain current (ID): 70A
- Technical features: Trench
Package: TO220
Domain and module applications:
This product is suitable for various fields and modules, as follows:
1. **Power module**:
Because VBM1102N has high drain-source voltage and drain current, it is suitable for use as the main switch or synchronous rectifier in switching power supply modules, providing reliable power conversion and efficient energy transfer.
2. **Power Tools**:
In power tools, VBM1102N can be used as a power switch for motor drivers to achieve efficient energy conversion and reliable performance of power tools.
3. **Automotive Electronics**:
Due to its high voltage and current characteristics, the VBM1102N is suitable for use in automotive electronic modules, such as motor drivers for electric vehicles or on-board power converters, providing stable power output and efficient energy utilization.
4. **Industrial Automation**:
In the field of industrial automation, this product can be used in various industrial control modules and drives, such as frequency converters, PLC systems and robot controllers, to achieve precise motion control and reliable system operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours