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VBL2609 Product details

Product introduction:

VBL2609 is a single-channel P-type metal oxide semiconductor field effect transistor (MOSFET) under the VBsemi brand. The device is manufactured using trench technology. The high performance and reliability of the product enable it to be used in a variety of industrial and consumer electronics applications. important role.
The device is packaged in TO263.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -60V 20(±V) -3V -110A 9 (mΩ) 7 (mΩ) Trench
Has the following main parameters:

- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 9m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 7m次
- Maximum drain current (ID): -110A

Domain and module applications:

The application of groove technology enables excellent performance in a variety of applications.
For example, in power management modules, VBL2609 can be used in DC-DC converters, power switch modules and other fields.
Its low on-resistance and high drain current make it particularly suitable for applications requiring high power density and efficiency, such as server power modules, electric vehicle controllers, etc.
In addition, its high threshold voltage and wide voltage range also make it an ideal choice for industrial control systems, medical equipment and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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