Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-P |
-40V |
20（±V） |
-2V |
-60A |
|
15 (mΩ) |
12 (mΩ) |
Trench |
**Detailed parameter description:**
The maximum drain-source voltage (VDS) is -40V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 15m次; when the gate-source voltage is 10V, the drain-source resistance is 12m次.
Its maximum drain current (ID) is -60A, using trench technology (Trench).
Domain and module applications：
VBL2412 transistor is suitable for a variety of fields and modules. For example,
In power switch modules, it can be used in power inverters, DC-DC converters and battery chargers.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for use in power management and power control applications with high power density and high efficiency.
In automotive electronic modules, it can be used in electric vehicle motor control, light driving and battery management systems.
Additionally, in industrial control modules it can be used for power switching, motor control and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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