Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-P |
-100V |
20（±V） |
-2V |
-14A |
|
178 (mΩ) |
164 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 178m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 164m次
- Quiescent drain current (ID): -14A
Domain and module applications：
VBL2102MA is suitable for a variety of fields and modules. It has the characteristics of high-performance power switch and can be applied to the following scenarios:
1. Power management module: This MOSFET can be used for power switches in power management modules, such as DC-DC converters, switching power supplies, etc., to provide stable and reliable power output."
2. Electric vehicles: In electric vehicles, VBL2102MA can be used in battery management systems and motor control modules to ensure high efficiency and drive control of electric vehicles.
3. Solar inverter: suitable for power switch modules in solar inverters to achieve high-efficiency power conversion and stable output power.
4. Industrial automation: This MOSFET can be used in power switches and drive control modules in industrial automation equipment, such as frequency converters, servo drives, etc., to improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
