Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
900V |
30（±V） |
3.5V |
20A |
|
|
270 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBL19R20S
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 270 m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications：
Application examples:
1. Power electronics field: used in high-voltage applications such as power converters, inverters and frequency converters.
2. Automotive electronic module: suitable for power management and control systems of automotive electric vehicles.
3. Industrial automation: It can be used for power control and drive of factory equipment.
4. Solar inverter: used in inverter circuits in solar power generation systems.
5. Medical electronics: suitable for power control and power management modules in medical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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