VBL19R20S Product details
Product introduction:
VBsemi's VBL19R20S is a single N-type field effect transistor with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a 20A Drain current (ID). Manufactured using SJ_Multi-EPI technology and packaged as TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 30(±V) | 3.5V | 20A | 270 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Product model: VBL19R20S
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 270 m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications:
Application examples:
1. Power electronics field: used in high-voltage applications such as power converters, inverters and frequency converters.
2. Automotive electronic module: suitable for power management and control systems of automotive electric vehicles.
3. Industrial automation: It can be used for power control and drive of factory equipment.
4. Solar inverter: used in inverter circuits in solar power generation systems.
5. Medical electronics: suitable for power control and power management modules in medical equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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