Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
900V |
30（±V） |
3.5V |
11A |
|
|
580 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL19R11S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 580
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: VBL19R11S is suitable for industrial power modules, such as frequency converters, motor drivers, etc., providing efficient and stable power output.
2. High-voltage direct current transmission system: Power switch module used in high-voltage direct current transmission system to realize the transmission and conversion of electric energy.
3. Automobile electrification system: In the field of automobile electrification, this device can be used in motor controllers, battery management systems, etc. of electric vehicles to provide efficient power control.
4. Solar inverter: In solar inverter, VBL19R11S can be used to convert the DC power output by the solar panel into AC power for household and industrial electricity.
5. Power management module: In various power management modules, this device can be used for power control, voltage regulation and other functions to improve the performance and reliability of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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