Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO263 |
Single-N |
900V |
30(±V) |
3.5V |
9A |
|
|
750 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL19R09S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 750m次
- Rated drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications:
Examples of applicable fields and modules:
1. Electric vehicle motor drive: VBL19R09S has a high drain voltage and rated drain current, and is suitable for power switching and power management in electric vehicle motor drive systems to help achieve efficient operation and power output of electric vehicles.
2. Industrial frequency conversion speed control: In industrial frequency conversion speed regulation systems, power switching devices that can withstand high voltage and current are required. VBL19R09S can be used for switch control in frequency converters to achieve motor speed regulation and energy-saving control.
3. Solar inverter: VBL19R09S can be used as a key component of solar photovoltaic inverter to help achieve efficient conversion of solar energy and access to the power grid, and promote the utilization and promotion of renewable energy.
4. Power module: Since VBL19R09S has a high drain voltage and low on-resistance, it is suitable for switching power supplies, inverters and converters in power modules, and can be used in industrial control and power supply fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours