Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO263 |
Single-N |
800V |
30(±V) |
3.5V |
15A |
|
|
380 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL18R15S
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO263
- The main parameters:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage Vth: 3.5V
- On-resistance (m次) at VGS=10V: 380
- Maximum drain current ID: 15A
- Technology: SJ_Multi-EPI
Domain and module applications:
This product is suitable for the following areas and modules:
- Renewable energy field: suitable for power switch modules in solar inverters, used to convert DC power generated by solar panels into AC power to realize the utilization of renewable energy.
- Industrial control systems: It can be used in the output stage of high-voltage DC converters in industrial control systems to help achieve precise control and regulation of industrial equipment.
- Electric vehicle charging equipment: Power switch modules used in electric vehicle charging equipment to achieve efficient and fast charging of electric vehicles to meet the needs of the electric vehicle market.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours