Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
800V |
30（±V） |
3.5V |
13A |
|
|
370(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBL18R13S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO263
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 370
- Maximum drain current (ID): 13A
- Technology: SJ_Multi-EPI
Domain and module applications：
Examples of application areas:
1. Power inverter module: VBL18R13S has a drain-source voltage of 800V and a maximum drain current of 13A. It is suitable for use in power inverter modules and can help convert DC power into AC power to achieve effective utilization of electrical energy.
2. Electric vehicle charger: Due to its high performance and stability, this product can be used in electric vehicle charger modules to help achieve fast charging and safe operation of electric vehicles.
3. High-voltage DC transmission system: VBL18R13S is suitable for high-voltage DC transmission systems. It can control the current and voltage of the transmission system stably and reliably to ensure the safe transmission of electric energy.
4. Industrial motor drive: This product can also be used in industrial motor drive modules, such as motor controllers, frequency converters, etc., to help achieve efficient operation and precise control of motors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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