Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
800V |
30（±V） |
3.5V |
11A |
|
|
500 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL18R11S
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- Gate-source resistance (RDS(on)) (VGS=10V): 500m次
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications：
Examples of product applicable areas and modules:
1. Power module: VBL18R11S has a drain-source voltage of 800V and a drain current of 11A. It is suitable for various power modules, such as industrial power supplies, UPS systems, etc., and can provide stable and reliable power output.
2. Switching power supply: Due to its low gate-source resistance and high drain-source voltage tolerance, it is suitable for switching power supplies, such as power adapters, frequency converters, etc., and can achieve efficient switching control. .
3. Motor drive: In the field of motor drive, VBL18R11S can be used as a power switching element in the motor driver to control the start, stop and speed of the motor, such as in electric vehicles, power tools and other fields.
To sum up, VBL18R11S is a field effect transistor product with stable performance and wide application, which can be widely used in fields and modules such as power supply, switch and driver.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
