Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
800V |
30（±V） |
3.5V |
10A |
|
|
480(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL18R10S
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO263
- The main parameters:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage Vth: 3.5V
- On-resistance (m次) at VGS=10V: 480
- Maximum drain current ID: 10A
- Technology: SJ_Multi-EPI
Domain and module applications：
This product is suitable for the following areas and modules:
- Solar photovoltaic inverter: Due to its high drain-source voltage and large drain current, it is suitable for DC to AC conversion of solar photovoltaic inverter, helping to convert the DC power generated by photovoltaic panels into usable of alternating current.
- Electric vehicle charging piles: The power switch module can be used in electric vehicle charging piles to realize fast charging of electric vehicles and meet the needs of the electric vehicle market for charging speed and efficiency.
- Industrial power systems: In industrial power systems, this product can be used in the output stage of high-voltage DC converters to help achieve high-efficiency DC to AC conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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