Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
800V |
30（±V） |
3.5V |
7A |
|
|
850 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL18R07S
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO263
- The main parameters:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage Vth: 3.5V
- On-resistance (m次) at VGS=10V: 850
- Maximum drain current ID: 7A
- Technology: SJ_Multi-EPI
Domain and module applications：
This product is suitable for the following areas and modules:
- High-voltage DC converter: Due to its high drain-source voltage and large drain current, it can be used in the output stage of high-voltage DC converter.
- Electric vehicle drive system: In the electric vehicle drive system, this MOSFET can be used in the power inverter module to convert DC power to AC power to drive the electric motor of the electric vehicle.
- Solar Inverter: In a solar inverter, this product can be used to convert DC power generated by photovoltaic panels into AC power for use on the power grid.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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