VBL18R07S Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 30(±V) | 3.5V | 7A | 850 (mΩ) | SJ_Multi-EPI |
- Product model: VBL18R07S
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO263
- The main parameters:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage Vth: 3.5V
- On-resistance (m次) at VGS=10V: 850
- Maximum drain current ID: 7A
- Technology: SJ_Multi-EPI
Domain and module applications:
- High-voltage DC converter: Due to its high drain-source voltage and large drain current, it can be used in the output stage of high-voltage DC converter.
- Electric vehicle drive system: In the electric vehicle drive system, this MOSFET can be used in the power inverter module to convert DC power to AC power to drive the electric motor of the electric vehicle.
- Solar Inverter: In a solar inverter, this product can be used to convert DC power generated by photovoltaic panels into AC power for use on the power grid.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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