Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
850V |
30（±V） |
3.5V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBL185R02
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 6500
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Power converter: Due to its high drain-source voltage and low drain current, VBL185R02 is suitable for various power converters, such as switching power supplies, AC-DC converters, etc.
2. Electric vehicle charger: As a power switching element in an electric vehicle charger, the MOSFET can achieve efficient power conversion and charging control.
3. Solar inverter: Among solar inverters, VBL185R02 can be used to convert solar power into AC power, which can be supplied to the grid or used in independent power systems.
4. Power electronic inverter: In industrial power electronic inverter, the MOSFET can be used to adjust the speed of the motor and control the working state of the motor.
5. Wind energy power generation system: As a power switching element in wind energy power generation system, VBL185R02 can realize efficient conversion and output of wind energy and provide clean energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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