Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
700V |
30（±V） |
3.5V |
15A |
|
|
260(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBL17R15SE
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On resistance (VGS=10V): 260m次
- Drain current (ID): 15A
- Technology: SJ_Deep-Trench
-Package: TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: Because VBL17R15SE has high drain-source voltage and drain current, it is suitable for industrial power modules, such as DC power supplies and inverters.
2. High-voltage switching module: Its drain-source voltage of 700V makes it suitable for high-voltage switching modules for switching devices in power transmission and distribution systems.
3. Chargers and inverters: The VBL17R15SE’s high voltage tolerance and large drain current make it an ideal choice in chargers and inverters for electric vehicle charging and solar inverter systems.
4. Electric vehicle driver: This product can be used in the driver module of electric vehicles to provide efficient power control and conversion to optimize the vehicle power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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