Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
700V |
30（±V） |
3.5V |
11A |
|
|
360(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBL17R11SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 360m次
- Drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Solar inverter: VBL17R11SE has high withstand voltage and on-resistance, and is suitable for high-power converters in solar inverters to improve the energy conversion efficiency of solar panels.
2. Electric vehicle charging piles: The product's high withstand voltage and drain current characteristics make it an ideal choice for power electronic devices in electric vehicle charging piles, and can be used in DC-DC converters and inverters.
3. Industrial control system: In industrial control systems, VBL17R11SE can be used for switching power supply control and motor drive to achieve high-efficiency energy conversion and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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