VBL17R11SE Product details
Product introduction:
VBL17R11SE is a VBsemi brand single N-channel field effect transistor with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Deep-Trench technology and is packaged as TO263. Its main features are an on-resistance of 360mΩ (at VGS=10V) and a drain current (ID) of 11A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 30(±V) | 3.5V | 11A | 360(mΩ) | SJ_Deep-Trench |
- Model: VBL17R11SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 360m次
- Drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO263
Domain and module applications:
1. Solar inverter: VBL17R11SE has high withstand voltage and on-resistance, and is suitable for high-power converters in solar inverters to improve the energy conversion efficiency of solar panels.
2. Electric vehicle charging piles: The product's high withstand voltage and drain current characteristics make it an ideal choice for power electronic devices in electric vehicle charging piles, and can be used in DC-DC converters and inverters.
3. Industrial control system: In industrial control systems, VBL17R11SE can be used for switching power supply control and motor drive to achieve high-efficiency energy conversion and motor control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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