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VBL17R11S Product details

Product introduction:

Product introduction: VBsemi's VBL17R11S is a single N-channel MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology, with TO263 package, suitable for a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 700V 30(±V) 3.5V 11A 450 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 700V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 450m次, and the maximum drain current is 11A.

Domain and module applications:

Examples of applicable fields and modules:
1. Electric vehicle charger: Due to its high voltage and current characteristics, VBL17R11S can be used as a power switch module in an electric vehicle charger to achieve fast and safe charging.
2. Industrial automation control: In industrial automation systems, this product can be used in motor drives and power control modules to ensure stable operation and efficient production of production lines.
3. Solar inverter: In a solar inverter, VBL17R11S can be used as a key switching tube to convert the DC power generated by the solar panel into AC power to supply household and commercial power.

The above is an introduction to VBsemi's VBL17R11S product, detailed parameter descriptions, and examples of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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