Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
700V |
30（±V） |
3.5V |
8A |
|
|
540(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBL17R08SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 540
- Drain current (ID): 8A
- Process technology: SJ_Deep-Trench
-Package: TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: Due to its high drain voltage and reliability, it is suitable for applications such as switching power supplies and DC-DC converters.
2. Medical equipment: It can be used in power management and driver modules in medical equipment to ensure the stable operation of the equipment.
3. Industrial automation: Suitable for power switch modules in industrial automation systems to improve the efficiency and reliability of production equipment.
4. Solar inverter: The switch module used in the solar inverter converts the DC output of the solar panel into alternating current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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