Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO263 |
Single-N |
700V |
30(±V) |
3.2V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBL17R02
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.2V
- On-resistance when gate-source voltage is 10V: 6500m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO263
Domain and module applications:
Examples of product applicable fields and modules:
1. Power management module: The low drain current and high withstand voltage characteristics of VBL17R02 make it suitable for various low-power power management modules, such as power adapters, battery chargers, etc.
2. LED lighting driver: Because VBL17R02 has low on-resistance and high withstand voltage characteristics, it can be used as a power switching device in LED lighting driver circuits to improve the stability and efficiency of LED lamps.
3. Industrial automation control: It can be used in switch control modules in various industrial automation equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours