VBL16R41SFD Product details
Product introduction:
VBsemi's VBL16R41SFD is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 62
- Maximum drain current (ID): 41A
Domain and module applications:
- Industrial power module: Due to its high voltage and high current characteristics, it is suitable for switching and control of industrial power modules.
- Electric Vehicle Drivers: The VBL16R41SFD's high voltage tolerance and low on-resistance make it an ideal choice in electric vehicle drivers for motor drive and battery management.
- Solar inverter: Can be used for power conversion and current control in solar inverters to achieve high-efficiency solar power generation systems.
- Industrial automation systems: Suitable for switching power supplies, motor control and power management in industrial automation systems.
- LED lighting driver: In LED lighting systems, it can be used as a driver to achieve efficient LED light source control and regulation.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image