VBL16R34SFD Product details
Product introduction:
VBsemi's VBL16R34SFD is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 30(±V) | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 80
- Maximum drain current (ID): 34A
Domain and module applications:
- Solar Inverters: Due to its high voltage tolerance and high drain current, it is suitable for power conversion and current control in solar inverters.
- Industrial automation systems: Can be used for power switches, motor control and power management in industrial automation systems to ensure efficient operation of the system.
- Electric vehicle charger: In an electric vehicle charger, it can be used as a switching tube to achieve efficient energy conversion and battery charge management.
- High-performance power module: Suitable for high-performance power module, used for voltage conversion and power control to ensure system stability and reliability.
Technical support:
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