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VBL16R34SFD Product details

Product introduction:

Product introduction:

VBsemi's VBL16R34SFD is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 600V 30(±V) 3.5V 34A 80(mΩ) SJ_Multi-EPI
Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 80
- Maximum drain current (ID): 34A

Domain and module applications:

Examples of applicable fields and modules:

- Solar Inverters: Due to its high voltage tolerance and high drain current, it is suitable for power conversion and current control in solar inverters.
- Industrial automation systems: Can be used for power switches, motor control and power management in industrial automation systems to ensure efficient operation of the system.
- Electric vehicle charger: In an electric vehicle charger, it can be used as a switching tube to achieve efficient energy conversion and battery charge management.
- High-performance power module: Suitable for high-performance power module, used for voltage conversion and power control to ensure system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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