Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
600V |
30（±V） |
3.5V |
11A |
|
|
380 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBL16R11S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 600V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 380m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Automotive electronics: VBL16R11S can be used in automotive electronic modules, such as engine control units (ECUs), on-board chargers and electric vehicle power modules, to achieve vehicle power control and electrical system stability.
2. Industrial automation: In industrial control systems, this MOSFET is suitable for modules such as motor drives, switching power supplies, and power inverters to control the operation and energy conversion of various industrial equipment.
3. Solar power generation: Used in solar inverter modules to convert DC power generated by solar panels into AC power to power homes and commercial purposes.
4. LED lighting: In LED lighting systems, VBL16R11S can be used in LED driver modules to achieve brightness adjustment and energy-saving control of LED lights, suitable for indoor and outdoor lighting applications.
The above are examples of application of VBL16R11S products in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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