Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
650V |
30（±V） |
3.5V |
25A |
|
|
115(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBL165R25SE
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: SJ_Deep-Trench
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 115m次
- Drain current (ID): 25A
-Package: TO263
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and drain current capabilities, it can be used in power management modules such as switching power supplies, inverters and DC-DC converters.
2. Electric vehicle charging piles: It has high voltage and current bearing capacity and is suitable for power regulation and switch control in electric vehicle charging piles.
3. Industrial motor drive: It can be used for power switching and current control in industrial motor drive systems to improve system efficiency and performance.
4. Solar inverter: Inverter used in solar photovoltaic systems to convert solar power into AC power and provide it to household and industrial power systems.
These are just to name a few, the product can also be used in other fields and modules that require high performance power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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