Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
650V |
30（±V） |
3.5V |
20A |
|
|
150(mΩ) |
SJ_Deep-Trench |
Parameter Description:
- Model: VBL165R20SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 150m次
- Maximum drain current (ID): 20A
- Technology: SJ_Deep-Trench
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
The product is suitable for various fields and modules, including but not limited to:
1. Power module: used for switching power supplies, inverters and DC-DC converters.
2. Automotive electronics: It is widely used in automotive electronic systems, such as engine control units (ECU), battery management systems (BMS) and electric vehicle controllers.
3. Industrial control: used in industrial automation equipment, robots and power electronic equipment.
4. Solar inverter: In a solar power generation system, as a key component of the inverter, it converts DC power into AC power.
5. LED lighting: used in LED drivers to control the brightness and power of LEDs.
These fields and modules require high-performance, high-reliability MOSFETs to implement power control and conversion functions, and VBL165R20SE is an ideal choice to meet these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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