Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
650V |
30（±V） |
3.5V |
10A |
|
|
1100 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBL165R10
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 1100m次
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Industrial power module: used for power switch control in industrial automation equipment, motor drives and UPS systems.
2. Solar inverter: In a solar power generation system, as a key component of the inverter, it converts DC power into AC power.
3. Electric vehicle charging pile: used for power switch control in electric vehicle charging piles to control charging current and voltage.
4. LED lighting control: power switch control in LED lighting products, such as LED lamps, street lights, etc.
5. Industrial automation control: used for power switch control in factory automation control systems, robot control and power tools.
These fields and modules require high-performance, high-reliability power switching components to achieve power control and conversion functions, and VBL165R10 is an ideal choice to meet these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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