VBL165R10 Product details
Product introduction:
VBL165R10 is a single N-channel field effect transistor (MOSFET) launched by the brand VBsemi. The device has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, it has an on-resistance of 1100mΩ and can withstand a maximum drain current (ID) of 10A. It adopts Plannar technology and is packaged as TO263.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 30(±V) | 3.5V | 10A | 1100 (mΩ) | Plannar |
- Model: VBL165R10
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 1100m次
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package:TO263
Domain and module applications:
This product is suitable for the following areas and modules:
1. Industrial power module: used for power switch control in industrial automation equipment, motor drives and UPS systems.
2. Solar inverter: In a solar power generation system, as a key component of the inverter, it converts DC power into AC power.
3. Electric vehicle charging pile: used for power switch control in electric vehicle charging piles to control charging current and voltage.
4. LED lighting control: power switch control in LED lighting products, such as LED lamps, street lights, etc.
5. Industrial automation control: used for power switch control in factory automation control systems, robot control and power tools.
These fields and modules require high-performance, high-reliability power switching components to achieve power control and conversion functions, and VBL165R10 is an ideal choice to meet these requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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