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VBL165R08SE Product details

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Product introduction：

Product Introduction: VBsemi’s VBL165R08SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Deep-Trench technology and is packaged as TO263.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 30（±V） 3.5V 8A 460(mΩ) SJ_Deep-Trench
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 460m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO263

Domain and module applications：

Examples of applicable fields and modules:
- Power module: Suitable for medium-power power modules, such as power inverters and industrial power supplies.
- Automotive electronics: Can be used in power switches in automotive electronic modules, such as on-board chargers and vehicle power control systems.
- Power tools: Suitable for power switch modules in power tools, such as electric drills and electric hammers, to achieve efficient motor drive and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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