VBL165R05SE Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 30(±V) | 3.5V | 5A | 780(mΩ) | SJ_Deep-Trench |
- Brand: VBsemi
- Model: VBL165R05SE
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 780
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package:TO263
Domain and module applications:
1. Power management module: Because VBL165R05SE has high withstand voltage and low on-resistance characteristics, it is suitable for designing power management modules to provide stable and reliable power output.
2. LED lighting driver: In LED lighting driver, it can be used as a power switching device to achieve high-efficiency energy conversion and light control.
3. Automotive electronic systems: In automotive electronic systems, it can be used to design vehicle power management and drive modules to provide reliable power output and control.
4. Industrial automation control: Suitable for power conversion and control circuits in industrial automation control systems to ensure high efficiency and stability of equipment.
Technical support:
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