Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
650V |
30（±V） |
3.5V |
5A |
|
|
780(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VBL165R05SE
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 780
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package:TO263
Domain and module applications：
Examples of applicable fields and modules:
1. Power management module: Because VBL165R05SE has high withstand voltage and low on-resistance characteristics, it is suitable for designing power management modules to provide stable and reliable power output.
2. LED lighting driver: In LED lighting driver, it can be used as a power switching device to achieve high-efficiency energy conversion and light control.
3. Automotive electronic systems: In automotive electronic systems, it can be used to design vehicle power management and drive modules to provide reliable power output and control.
4. Industrial automation control: Suitable for power conversion and control circuits in industrial automation control systems to ensure high efficiency and stability of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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