Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
500V |
30（±V） |
3.5V |
30A |
|
|
140 (mΩ) |
SJ_Multi-EPI |
parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage (VGS) (㊣V): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 140m次
- Rated drain current (ID): 30A
- Technology: Multiple Epitaxy Platform (SJ_Multi-EPI)
Package: TO263
Domain and module applications：
Example application:
1. **Electric vehicle power system**:
VBL15R30S is suitable for inverters and drive controllers in electric vehicle power systems. Its high rated drain-source voltage and drain current capabilities make it suitable for use in electric vehicle drivetrains to provide efficient power switching functions.
2. **Industrial high-voltage power module**:
Among industrial high-voltage power modules, VBL15R30S can be used as power switches in high-voltage DC power supplies and power converters. Its high rated drain-source voltage and drain current characteristics make it suitable for industrial control systems and power transmission equipment.
3. **Solar Inverter**:
In solar inverters, VBL15R30S can be used as a power switching element in the inverter circuit. Its high rated drain-source voltage and drain current capabilities make it suitable for high-power solar photovoltaic power generation systems, improving the efficiency and reliability of the inverter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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