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VBL1101N Product details
Back to previous pageProduct introduction：
The VBL1101N is a single-channel N-type MOSFET with a 100V saturated drain-source voltage and a standard ±20V gate-source voltage range. Its threshold voltage is 2.5V, and the drain-source on-resistance is 23mΩ (when VGS=4.5V) and 10mΩ (when VGS=10V) at different gate-source voltages. The maximum drain current is 100A, using Trench technology, and the package is TO263.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 20（±V） | 2.5V | 100A | 23 (mΩ) | 10 (mΩ) | Trench |
**parameter:**
- **Single N**: Single channel N-type MOSFET
- **VDS(V)**: Saturated drain-source voltage 100V
- **VGS(㊣V)**: Standard gate-source voltage range ㊣20V
- **Vth(V)**: Threshold voltage 2.5V
- **VGS=4.5V(m次)**: drain-source on-resistance 23m次 when gate-source voltage is 4.5V
- **VGS=10V(m次)**: drain-source on-resistance 10m次 when gate-source voltage is 10V
- **ID (A)**: Maximum drain current 100A
- **Technology:** Trench
- **Package:** TO263
- **Single N**: Single channel N-type MOSFET
- **VDS(V)**: Saturated drain-source voltage 100V
- **VGS(㊣V)**: Standard gate-source voltage range ㊣20V
- **Vth(V)**: Threshold voltage 2.5V
- **VGS=4.5V(m次)**: drain-source on-resistance 23m次 when gate-source voltage is 4.5V
- **VGS=10V(m次)**: drain-source on-resistance 10m次 when gate-source voltage is 10V
- **ID (A)**: Maximum drain current 100A
- **Technology:** Trench
- **Package:** TO263
Domain and module applications：
**Application introduction and examples:**
1. **Power Inverter Application:**
Because VBL1101N has high drain current capability and low on-resistance, it is suitable for use in switching circuits in power inverters. For example, it can be used as a power switching device in a solar inverter to convert DC power generated by solar panels into AC power to power home and commercial equipment.
2. **Electric vehicle drive applications:**
In the motor driver of electric vehicles, VBL1101N can be used as a key device in the motor control circuit to control the start, stop and speed adjustment of electric vehicles. Its high drain current capability and low on-resistance ensure high power performance and efficiency for electric vehicles and are suitable for various electric vehicle drive applications.
3. **Industrial frequency converter module application:**
In industrial frequency converter modules, the VBL1101N can be used as a switching device in the frequency converter circuit to control the speed and direction of the AC motor. Its high performance and reliability make it suitable for variable frequency drives of industrial equipment, such as fans, water pumps, etc., improving energy efficiency and automation levels in the industrial production process.
1. **Power Inverter Application:**
Because VBL1101N has high drain current capability and low on-resistance, it is suitable for use in switching circuits in power inverters. For example, it can be used as a power switching device in a solar inverter to convert DC power generated by solar panels into AC power to power home and commercial equipment.
2. **Electric vehicle drive applications:**
In the motor driver of electric vehicles, VBL1101N can be used as a key device in the motor control circuit to control the start, stop and speed adjustment of electric vehicles. Its high drain current capability and low on-resistance ensure high power performance and efficiency for electric vehicles and are suitable for various electric vehicle drive applications.
3. **Industrial frequency converter module application:**
In industrial frequency converter modules, the VBL1101N can be used as a switching device in the frequency converter circuit to control the speed and direction of the AC motor. Its high performance and reliability make it suitable for variable frequency drives of industrial equipment, such as fans, water pumps, etc., improving energy efficiency and automation levels in the industrial production process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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