Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-P |
-100V |
20（±V） |
-2V |
-0.52A |
|
1050(mΩ) |
1000 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -100V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 1050m次; when the gate-source voltage is 10V, the drain-source resistance is 1000m次.
Its maximum drain current (ID) is -0.52A, using trench technology (Trench).
This product is packaged in SC70-3.
Domain and module applications：
The VBK2101K transistor is suitable for a variety of fields and modules.
For example, in mobile device modules, it can be used for mobile phone battery management, charging protection and power switches. Due to its small package and low power consumption, this transistor is particularly suitable for power management and power control in portable electronics. In the sensor interface module, it can be used for sensor signal conditioning and data acquisition.
In addition, in medical device modules, it can be used for power management and signal amplification of medical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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