中文
English
VBJ2208M Product details
Back to previous pageProduct introduction：
VBJ2208M is a VBsemi brand single P-type field effect transistor
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -200V | 30（±V） | -3V | -2A | 900 (mΩ) | 800 (mΩ) | Trench |
The maximum drain-source voltage (VDS) is -200V, the maximum gate-source voltage (VGS) is ㊣30V, and the threshold voltage (Vth) is -3V. When the gate-source voltage is 4.5V, the drain-source resistance is 900m次; when the gate-source voltage is 10V, the drain-source resistance is 800m次. Its maximum drain current (ID) is -2A, and the product is packaged in SOT223.
Domain and module applications：
VBJ2208M transistor is suitable for a variety of fields and modules. For example, in power management modules it can be used in voltage stabilizers, power switches and power inverters. Due to its high drain-source voltage and low drain-source resistance, this transistor is well suited for power amplification and switching control applications. In electric vehicle electronic modules, it can be used in battery management systems, motor controls and chargers. In addition, in LED driver modules, it can be used for current regulation and lamp bead control. In short, the VBJ2208M transistor has broad application prospects in power management, power control and signal processing modules in industry, automobiles, communications and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
