Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT223 |
Single-N |
650V |
30（±V） |
3.5V |
4A |
|
2500 (mΩ) |
2000 (mΩ) |
Plannar |
Parameter Description:
- Model: VBJ165R04
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2500m次
- On-resistance when VGS=10V: 2000m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package: SOT223
Domain and module applications：
Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Small power module: Power control module used for low-power equipment such as household appliances and consumer electronics.
2. Power tools: As power switching components in power tools, such as handheld electric drills, electric scissors, etc.
3. LED lighting control: Power switch control in LED lighting products, such as LED light strips, landscape lighting, etc.
4. Automotive electronics: It has applications in automotive electronic systems, such as vehicle power management, car light control, etc.
5. Smart home equipment: Power control modules used in smart home equipment such as smart sockets and smart switches.
These fields and modules require efficient, miniaturized power switching components to achieve power control and switching functions, and VBJ165R04 is an ideal choice to meet these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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