Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT223 |
Single-N |
200V |
20（±V） |
3V |
3A |
|
|
283 (mΩ) |
Trench |
parameter:
- Type: Single N channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=10V: 283
- Maximum drain current (ID): 3A
- Technology: Trench structure (Trench)
Package: SOT223
Domain and module applications：
Application examples:
1. Power management module: VBJ1203M can be used as a power switch and voltage regulator in small and medium power power management modules, providing stable and reliable power output and suitable for various portable electronic devices and consumer electronics products.
2. LED driver: In the field of LED lighting, VBJ1203M can be used for power conversion and current regulation in LED driver modules to help achieve efficient energy conversion and brightness adjustment.
3. Industrial control module: In industrial control systems, VBJ1203M can be used in signal switches, motor drives and power management to provide reliable power control and electrical isolation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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