Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT89-6 |
Dual-N+N |
30V |
20(±V) |
1.7V |
5.2A |
|
26 (mΩ) |
22 (mΩ) |
Trench |
Product model: VBI3328
Brand: VBsemi
parameter:
- Type: Double N+P type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 26
- Drain-source resistance (m次) at VGS=10V: 22
- Drain current (ID): 5.2A
- Technology: Trench
Package: SOT89-6
Domain and module applications:
This VBI3328 product is suitable for the following fields and modules:
1. Low-voltage circuit protection: Due to its low drain current and moderate drain-source resistance, it can be used to design low-voltage circuit protection modules, such as over-current protection and over-voltage protection circuits.
2. Signal switch: Suitable for designing signal switch modules, such as audio signal switches and video signal switchers, to achieve signal switching and distribution.
3. Battery management system: Can be used to design battery management system modules, including battery charge and discharge control and battery protection functions, such as mobile device battery management and electric vehicle battery management.
4. Low-power power supply: Suitable for designing low-power power modules, such as portable chargers, electronic toys and wireless sensor nodes, to provide stable power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours