Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT89 |
Single-N |
100V |
20(±V) |
1.8V |
4.5A |
|
100 (mΩ) |
90 (mΩ) |
Trench |
parameter:
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 100
- Drain-source resistance (m次) at VGS=10V: 90
- Maximum drain current (ID): 4.5A
- Technology: Channel
Package: SOT89
Domain and module applications:
Example 1: Suitable for low-power electronic modules
Since VBI1101MF has lower drain current capacity and higher drain-source resistance, it is suitable for use as power switching devices in low-power electronic modules. In switching circuits that need to control low-power electronic equipment, such as sensor interfaces, smart home controllers, etc., VBI1101MF can be used as a driving device to achieve efficient energy utilization and system stability.
Example 2: Suitable for portable device module
Because the VBI1101MF has a small package and low drain current capacity, it is suitable for use as power switching devices in portable equipment modules. In portable electronic products, such as smartphones, tablets, handheld medical equipment, etc., VBI1101MF can be used as the switching element of the battery management module to achieve efficient energy consumption management of the device and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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