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VBGQT1803 Product details

Product introduction:

VBGQT1803 is a single N-type field effect transistor with high voltage tolerance and high current capability, suitable for power control and switching applications in high power and high frequency electronic circuits. Its features include high voltage tolerance, low threshold voltage and low leakage resistance, making it suitable for a variety of fields and modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TOLL Single-N 80V 20(±V) 3.5V 250A 2.65(mΩ) SGT
Product model: VBGQT1803
Brand: VBsemi
parameter:
- Type: Single N
- Maximum drain-source voltage (VDS): 80V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance at VGS=10V: 2.65 m次
- Maximum drain current (ID): 250A
- Technology: SGT
- Package: TOLL

Domain and module applications:

Examples of applicable areas and modules:
1. Electric vehicle drive system: Since VBGQT1803 has a maximum drain-source voltage of 80V and a maximum drain current of up to 250A, it is suitable for designing power switch modules for electric vehicle drive systems to achieve high-efficiency and reliable electric vehicles. Power transmission.

2. High-power power modules: Due to its low threshold voltage and low leakage resistance, VBGQT1803 is suitable for designing high-power power modules, such as power adapters for industrial purposes or DC-DC converters in power electronic equipment.

3. Industrial automation module: As a field effect transistor, VBGQT1803 has fast switching speed and low leakage resistance, and is suitable for use in various modules in industrial automation systems, such as motor control, solenoid valve drive and lighting system control.

4. High-frequency power amplifier module: Due to its high-frequency characteristics and large current carrying capacity, VBGQT1803 can be used to design high-frequency power amplifier modules, such as radio frequency power amplifiers in communication systems or signal transmitting modules in radar systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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