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VBGQF1606 Product details
Back to previous pageProduct introduction：
This product is a single-channel N-type field effect transistor, suitable for low-voltage driving applications. The following is a detailed parameter description and application introduction:
1. **VDS(V)**：60V
- This parameter specifies the maximum withstand voltage of the device. The transistor is capable of withstanding a maximum drain-source voltage of 60V.
2. **VGS(±V)**：20V
- VGS is the drain-gate voltage. This parameter specifies the maximum allowable gate voltage range, which is plus or minus 20V.
3. **Vth(V)**：2.5V
- Vth is the gate threshold voltage, that is, when the gate voltage reaches the level, the transistor starts to conduct. The threshold voltage of this product is 2.5V.
4. **VGS=4.5V(mΩ)**：7.7mΩ
- When the gate voltage is 4.5V, the on-resistance between drain and source is 7.7mΩ.
5. **VGS=10V(mΩ)**：6.5mΩ
- When the gate voltage is 10V, the on-resistance between drain and source is 6.5mΩ.
6. **ID (A)**：50A
- The maximum drain current for this product is 50A, indicating the maximum current load the device can withstand.
7. **Technology**：SGT
- Made with SGT (Super Junction Trench) technology, which has lower on-resistance and higher performance.
The package is DFN8 (3X3), and the DFN package size is 3x3mm, which is suitable for small circuit design and high-density integration.
VBGQF1606 is suitable for various power management and driver applications that require high performance and high efficiency, providing reliable solutions for related fields.
1. **VDS(V)**：60V
- This parameter specifies the maximum withstand voltage of the device. The transistor is capable of withstanding a maximum drain-source voltage of 60V.
2. **VGS(±V)**：20V
- VGS is the drain-gate voltage. This parameter specifies the maximum allowable gate voltage range, which is plus or minus 20V.
3. **Vth(V)**：2.5V
- Vth is the gate threshold voltage, that is, when the gate voltage reaches the level, the transistor starts to conduct. The threshold voltage of this product is 2.5V.
4. **VGS=4.5V(mΩ)**：7.7mΩ
- When the gate voltage is 4.5V, the on-resistance between drain and source is 7.7mΩ.
5. **VGS=10V(mΩ)**：6.5mΩ
- When the gate voltage is 10V, the on-resistance between drain and source is 6.5mΩ.
6. **ID (A)**：50A
- The maximum drain current for this product is 50A, indicating the maximum current load the device can withstand.
7. **Technology**：SGT
- Made with SGT (Super Junction Trench) technology, which has lower on-resistance and higher performance.
The package is DFN8 (3X3), and the DFN package size is 3x3mm, which is suitable for small circuit design and high-density integration.
VBGQF1606 is suitable for various power management and driver applications that require high performance and high efficiency, providing reliable solutions for related fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 20（±V） | 2.5V | 50A | 7.7(mΩ) | 6.5(mΩ) | SGT |
Product model: VBGQF1606
Brand: VBsemi
parameter:
-Single N
- VDS(V): 60
- VGS(㊣V): 20
-Vth(V)ㄩ2.5
- VGS=4.5V(m次): 7.7
- VGS=10V(m次): 6.5
- ID (A): 50
- Technology: SGT
Package: DFN8(3X3)
Brand: VBsemi
parameter:
-Single N
- VDS(V): 60
- VGS(㊣V): 20
-Vth(V)ㄩ2.5
- VGS=4.5V(m次): 7.7
- VGS=10V(m次): 6.5
- ID (A): 50
- Technology: SGT
Package: DFN8(3X3)
Domain and module applications：
Application introduction:
VBGQF1606 is suitable for various low-voltage, high-performance power management and driver applications, especially in the following fields and modules:
1. **Electric vehicle power control module**:
- Since VBGQF1606 has low on-resistance and high withstand voltage capability, it is very suitable for DC-DC converters, motor drives and battery management systems in electric vehicle power control modules.
2. **Industrial Automation**:
- In the field of industrial automation, this transistor can be used in various power inverters, AC speed regulators and high-performance motor drives to achieve high-efficiency industrial control systems.
3. **Solar Inverter**:
- Due to its low on-resistance and high voltage withstand capability, VBGQF1606 is ideally suited for use as power switching devices in solar inverters to achieve efficient conversion of solar energy.
4. **Consumer Electronics**:
- In consumer electronics, such as laptops, tablets and smartphones, VBGQF1606 can be used in power management, charging control and battery protection modules to provide high performance and reliability.
5. **LED lighting**:
- Used in switching power supplies, constant current drivers and other modules in LED lighting drive circuits to achieve high efficiency and long life of LED lighting products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
