Product introduction:
VBsemi's VBGQF1305 is a single-channel N-channel field effect transistor (Single N), manufactured using the SGT process. Its main parameters include: maximum drain-source voltage (VDS) of 30V, maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 1.7V, and the on-resistance at different gate-source voltages, etc. The device is packaged in DFN8 (3X3).
The device is suitable for use in electronic systems that require high performance and high reliability, such as modules in LED lighting, solar cells, and industrial control fields.
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Domain and module applications:
Application example:
1. **LED Lighting Module**: VBGQF1305’s low on-resistance and high voltage withstand capability make it ideal for use in drive circuits in LED lighting modules. For example, in LED light strips, it can be used as a current regulator to help achieve brightness adjustment and stable driving of LEDs.
2. **Solar Cell Module**: Since VBGQF1305 has a high maximum drain-source voltage and current tolerance, it is also very suitable for use in charge and discharge control circuits in solar cell modules. For example, in solar chargers, it can be used as a charge regulator to help manage and optimize the charge and discharge of solar cells.
3. **Industrial control module**: The high voltage withstand capability and high temperature resistance of this device make it widely used in industrial control modules. For example, in industrial automation, it can be used as a drive controller to help achieve precise control and efficient operation of various industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours