Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
200V |
20（±V） |
3V |
10A |
|
|
145(mΩ) |
SGT |
parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (miohms) at gate-source voltage 10V: 145
- Drain current (ID): 10A
- Technology: SGT (Silicon Gate Technology)
Package: DFN8(3X3)
Domain and module applications：
for example:
1. Industrial field: Because VBGQF1201M has high rated voltage and large drain current, it is suitable for industrial power supplies and motor control modules. For example, in industrial power modules, they can be used to implement high-voltage conversion and current regulation functions.
2. Automotive electronics field: This MOSFET can be used in power management modules in automotive electronic systems, such as DC-DC converters and electric vehicle charging modules. Its high voltage and low drain-source resistance characteristics make it suitable for power switching applications in a variety of automotive electrical systems.
3. Solar inverter: In solar inverter, VBGQF1201M can be used as a high-voltage switching device to help realize energy conversion from photovoltaic cells to the grid. Its high voltage rating and low drain resistance ensure efficient system operation and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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