Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
100V |
20（±V） |
1.8V |
27A |
|
25(mΩ) |
19(mΩ) |
SGT |
parameter:
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 25
- Drain-source resistance (m次) at VGS=10V: 19
- Maximum drain current (ID): 27A
- Technology: Sputter Channel
Package: DFN8(3X3)
Domain and module applications：
Example 1: Applicable to power switch module
This transistor has low drain-source resistance at VGS=10V, making it ideal for use as a power switching device in power switching modules. In power switch modules, it can provide efficient switching control to achieve efficient use of energy, such as in applications such as power adapters, LED lighting, and DC-DC converters.
Example 2: Suitable for electric vehicle driver module
Due to its high drain current capacity and low drain-source resistance, the VBGQF1102N is suitable for use as a power switching device in electric vehicle driver modules. In electric vehicle driver modules, it can be used for motor control and battery management to ensure efficient operation and safety of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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