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VBGQA3303G Product details

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Product introduction：

VBGQA3303G is a half-bridge N+N MOSFET with 30V drain-source voltage (VDS), 20V gate-source voltage (VGS), 1.7V threshold voltage (Vth), 3.5mΩ (VGS =4.5V) and 2.7mΩ (VGS=10V) on-resistance (RDS(on)), and a drain current (ID) of 75A. It is manufactured using SGT process and the package is DFN8(5X6)-C.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6)-C Half-Bridge-N+N 30V 20（±V） 1.7V 75A 3.5(mΩ) 2.7(mΩ) SGT
Product model: VBGQA3303G
Brand: VBsemi
parameter:
- Half-bridge N+N type
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3.5
- RDS(on) VGS=10V(m次): 2.7
- ID (A): 75
- Technology: SGT
Package: DFN8(5X6)-C

Domain and module applications：

VBGQA3303G is suitable for various circuit designs and module applications that require half-bridge driving. For example,
In electric vehicle circuits, it can be used in half-bridge circuits in motor drivers; in industrial control systems, it can be used in fields such as motor controllers and power switch modules. It is characterized by high drain current and low on-resistance, suitable for high-power and high-efficiency circuit design requirements. In addition, the DFN8(5X6)-C package design is compact and suitable for applications with limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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