中文
English
VBGQA3102N Product details
Back to previous pageProduct introduction：
VBsemi's VBGQA3102N is a dual N+N type power MOSFET designed for a variety of high-efficiency and high-density power conversion applications. Its excellent performance parameters make it popular in a variety of fields, enabling high-efficiency energy conversion and precise power management.
VBsemi's VBGQA3102N is suitable for multiple fields such as electric vehicles, power switches, industrial control and chargers/inverters, providing a reliable power switch solution for the design of various modules.
VBsemi VBGQA3207N features high drain voltage (200V) and large drain current (18A) and can be used in power modules such as switching power supplies and DC-DC converters.
VBsemi's VBGQA3102N is suitable for multiple fields such as electric vehicles, power switches, industrial control and chargers/inverters, providing a reliable power switch solution for the design of various modules.
VBsemi VBGQA3207N features high drain voltage (200V) and large drain current (18A) and can be used in power modules such as switching power supplies and DC-DC converters.
File download
Download PDF document
Download now
-B.png)
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 100V | 20（±V） | 1.8V | 35A | 22(mΩ) | 18(mΩ) | SGT |
**parameter:**
- Type: Double N+N type
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 22
- Drain-source resistance (m次) at VGS=10V: 18
- Maximum drain current (ID): 35A
- Technology: SGT (Superjunction Gate-Triggered)
- Package: DFN8(5X6)-B
- Type: Double N+N type
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 22
- Drain-source resistance (m次) at VGS=10V: 18
- Maximum drain current (ID): 35A
- Technology: SGT (Superjunction Gate-Triggered)
- Package: DFN8(5X6)-B
Domain and module applications：
**Applicable fields and modules:**
1. **Electric Vehicle Power Module:**
The VBGQA3102N has high drain current and moderate drain-source resistance, making it ideal for designing power modules for electric vehicles. This MOSFET can be used in motor drivers and battery management systems of electric vehicles to achieve high-efficiency energy conversion and long-term stable operation.
2. **Power switch module:**
In high-performance power switching modules, VBGQA3102N can be used as a key power switching element. Its low threshold voltage and low drain-source resistance ensure low power losses and high efficiency conversion, making it ideal for power switching modules.
3. **Industrial automation control system:**
In the field of industrial automation, VBGQA3102N can be used to design high-performance control system modules to achieve precise power management and stable power output. Its high drain current and reliability ensure long-term reliability in harsh operating environments.
4. **Charger and Inverter Module:**
As a key component in chargers and inverter modules, VBGQA3102N enables high-efficiency energy conversion and stable output voltage. Its high performance and reliability make it the component of choice for a variety of charger and inverter applications.
1. **Electric Vehicle Power Module:**
The VBGQA3102N has high drain current and moderate drain-source resistance, making it ideal for designing power modules for electric vehicles. This MOSFET can be used in motor drivers and battery management systems of electric vehicles to achieve high-efficiency energy conversion and long-term stable operation.
2. **Power switch module:**
In high-performance power switching modules, VBGQA3102N can be used as a key power switching element. Its low threshold voltage and low drain-source resistance ensure low power losses and high efficiency conversion, making it ideal for power switching modules.
3. **Industrial automation control system:**
In the field of industrial automation, VBGQA3102N can be used to design high-performance control system modules to achieve precise power management and stable power output. Its high drain current and reliability ensure long-term reliability in harsh operating environments.
4. **Charger and Inverter Module:**
As a key component in chargers and inverter modules, VBGQA3102N enables high-efficiency energy conversion and stable output voltage. Its high performance and reliability make it the component of choice for a variety of charger and inverter applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
