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VBGQA1307 Product details

Product introduction:

VBGQA1307 is a Single N-type MOSFET, suitable for applications requiring higher drain voltage and current
- Made using Trench technology;
- Packaged as DFN8((5X6).

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 20(±V) 1.7V 40A 9.5(mΩ) 6.8(mΩ) SGT
MOSFET type: Single N
Rated drain-source voltage (VDS): 30V
Gate-source voltage (VGS): ㊣20V
Threshold voltage (Vth): 1.7V
Static working resistance (RDS(on)):
When VGS=4.5V: 9.5m次
When VGS=10V: 6.8m次
Rated drain current (ID): 40A
Technology: SGT
Package: DFN8(5X6)

Domain and module applications:

This product is suitable for applications requiring higher drain voltage and current, such as:

Power management module: used for power management modules such as switching power supplies and DC-DC converters to achieve efficient energy consumption and stable power output.
Motor drive module: used for DC motor control, electric vehicle control and other motor drive modules to achieve high-performance motor control and drive.
Power inverter module: used in power inverter modules such as solar inverters and electric vehicle inverters to achieve conversion and inversion of electrical energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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