This product is a single N-type MOSFET. Its main parameters include:
- Maximum drain-source voltage (VDS) is 25V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.5V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 1.15mΩ;
- When the gate-source voltage is 10V, the on-resistance is 0.72mΩ;
- Maximum drain current (ID) is 180A;
- Manufactured using Strattengardt (SGT) technology;
- Package is DFN8(5X6).

Application introduction:
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Electric vehicle power module: Suitable for power inverters and motor controllers in electric vehicles due to its high drain current capability and low on-resistance.
- Solar Inverter Modules: Can be used for efficient energy conversion and grid connection in solar inverters.
- Industrial high-power modules: In industrial equipment, they can be used in modules such as high-power switching power supplies, motor drivers, and power tools.
- Power system module: Suitable for power system modules that require efficient energy conversion and stable power output.