Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
DFN8(5X6) |
Single-N |
100V |
20(±V) |
1.8V |
30A |
|
26(mΩ) |
21(mΩ) |
SGT |
parameter:
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 26m次
- Drain-source on-resistance (m次) at VGS=10V: 21m次
- Drain current (ID): 30A
- Technology: SGT (Silicon-Germanium Trench)
-Package: DFN8(5X6)
Domain and module applications:
for example:
1. Automotive electronic modules:
VBGQA1102N is suitable for power management, power transmission and motor control systems in automotive electronic modules. Its high performance and reliability can ensure the stable operation of automotive electronic equipment while improving the car's energy efficiency and driving experience.
2. Wireless communication equipment module:
In wireless communication equipment modules, VBGQA1102N can be used as a power amplifier and switch controller to achieve signal amplification and processing. Its low on-resistance and high frequency response characteristics can provide stable signal transmission and efficient energy conversion, meeting the high performance and reliability requirements of wireless communication equipment.
3. Industrial automation module:
In industrial automation control systems, VBGQA1102N can be used in motor drive, power inverter and current control applications. Its high drain current and low on-resistance can achieve high-efficiency power conversion and precise current control, improving the efficiency and stability of industrial production.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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