Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO263 |
Single-N |
80V |
20（±V） |
3V |
150A |
|
|
3.1(mΩ) |
SGT |
Product model: VBGL1803
Brand: VBsemi
parameter:
- Structure type: Unipolar N-channel MOSFET
- Rated drain-source voltage (VDS): 80V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 3.1m次
- Rated drain current (ID): 150A
- Technology: SGT
-Package: TO263
Domain and module applications：
for example:
1. Field: Electric Vehicles
- Module: Electric vehicle drive module
- Application: In the drive module of electric vehicles, VBGL1803 can be used for motor control and battery management. Its high voltage tolerance and low on-resistance provide stable electric vehicle performance and enable efficient power delivery.
2. Field: Industrial power supply
- Module: High power industrial power module
- Application: In industrial power systems, VBGL1803 can be used for the control and regulation of high-power switching power supplies. Its high drain current tolerance and low leakage current characteristics make it suitable for power supply systems of industrial equipment and machinery to ensure stable and reliable power output.
3. Field: Solar Inverter
- Module: Solar inverter module
- Application: In solar inverters, VBGL1803 can be used for energy conversion control from solar panels to the grid. Its low on-resistance and high drain current tolerance provide efficient solar power conversion efficiency and ensure stable operation of the inverter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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