The VBGL1803 is a high performance unipolar N-channel MOSFET with high voltage tolerance, low leakage current and low on-resistance, making it suitable for a variety of high power and high frequency power switching and control applications. Its reliability and stability make it widely used in multiple fields and modules.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 20（±V） | 3V | 180A | 3.1(mΩ) | SGT |
Product model: VBGL1803
Brand: VBsemi
parameter:
- Structure type: Unipolar N-channel MOSFET
- Rated drain-source voltage (VDS): 80V
- Rated gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (mΩ) at VGS=10V: 3.1mΩ
- Rated drain current (ID): 180A
- Technology: SGT
-Package: TO263
for example:
1. Field: Electric Vehicles
- Module: Electric vehicle drive module
- Application: In the drive module of electric vehicles, VBGL1803 can be used for motor control and battery management. Its high voltage tolerance and low on-resistance provide stable electric vehicle performance and enable efficient power delivery.
2. Field: Industrial power supply
- Module: High power industrial power module
- Application: In industrial power systems, VBGL1803 can be used for the control and regulation of high-power switching power supplies. Its high drain current tolerance and low leakage current characteristics make it suitable for power supply systems of industrial equipment and machinery to ensure stable and reliable power output.
3. Field: Solar Inverter
- Module: Solar inverter module
- Application: In solar inverters, VBGL1803 can be used for energy conversion control from solar panels to the grid. Its low on-resistance and high drain current tolerance provide efficient solar power conversion efficiency and ensure stable operation of the inverter.
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