Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
120V |
20（±V） |
3V |
50A |
|
10.7(mΩ) |
8.8(mΩ) |
SGT |
**Product model:** VBGE11208
**Brand:** VBsemi
**parameter:**
- Unipolar N-type MOSFET
- Rated drain-source voltage (VDS): 120V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- At VGS=4.5V, drain-source on-resistance (m次): 10.7
- At VGS=10V, drain-source on-resistance (m次): 8.8
- Maximum drain current (ID): 50A
- Technology: SGT
**Package:** TO252
Domain and module applications：
**Application introduction and examples:**
- **Power module:** VBGE11208 is suitable for switching power supplies, DC-DC converters and inverters in power modules. Due to its high voltage and high current capabilities, it can be used in power modules in industrial control systems, power management systems and communication equipment.
- **Electric vehicle charger:** In electric vehicle chargers, VBGE11208 can be used as a power switch to control the charging current and protect the circuit. For example, it can be used in power switching modules in electric vehicle charging piles, fast charging stations and home electric vehicle chargers.
- **Industrial Automation:** Due to its high voltage and high current characteristics, VBGE11208 is suitable for drives and power supply units in industrial automation systems. For example, power switching modules can be used in factory automation equipment, robotics and smart manufacturing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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