Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
900V |
30（±V） |
3.5V |
11A |
|
|
580 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB19R11S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 580m次
- Rated drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: Since VBFB19R11S has a high drain voltage and low on-resistance, it is suitable for switching power supplies, inverters and converters in power modules, and can be used in industrial control and power supply fields.
2. LED lighting control: In LED lighting systems, power switching devices need to withstand high voltage and current. VBFB19R11S can be used for switch control in LED drive circuits to achieve efficient power supply and brightness adjustment of LED lights.
3. Solar inverter: VBFB19R11S can be used as a key component of solar photovoltaic inverter to help achieve efficient conversion of solar energy and access to the power grid, and promote the utilization and promotion of renewable energy.
4. Industrial electric equipment: In industrial electric equipment, power switching devices need to withstand high voltage and current. VBFB19R11S can be used for motor drive and power management to help achieve efficient operation and automated control of industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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