Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
900V |
30（±V） |
3.5V |
7A |
|
|
950 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB19R07S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 950
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: VBFB19R07S is suitable for industrial power modules, such as motor drivers, UPS systems, etc., to provide stable power output.
2. High-voltage DC transmission system: Power switch module used in DC transmission system to realize the transmission and conversion of high-voltage DC power.
3. Medical equipment: In medical equipment, this device can be used in modules such as medical imaging equipment and surgical instruments to provide reliable power support.
4. Automobile electrification system: In the field of automobile electrification, VBFB19R07S can be used in the electric drive system of electric vehicles, such as motor controllers, battery management systems, etc.
5. Solar Inverter: In a solar inverter, this device can be used to convert the DC power output from the solar panel into AC power for household and industrial use.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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