VBFB19R07S Product details
Product introduction:
VBsemi's VBFB19R07S is a single N-channel power MOSFET, using SJ_Multi-EPI technology and packaged in TO251. This product has high voltage withstand capability and low on-resistance, making it suitable for a variety of power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 30(±V) | 3.5V | 7A | 950 (mΩ) | SJ_Multi-EPI |
- Product model: VBFB19R07S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 950
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications:
1. Industrial power module: VBFB19R07S is suitable for industrial power modules, such as motor drivers, UPS systems, etc., to provide stable power output.
2. High-voltage DC transmission system: Power switch module used in DC transmission system to realize the transmission and conversion of high-voltage DC power.
3. Medical equipment: In medical equipment, this device can be used in modules such as medical imaging equipment and surgical instruments to provide reliable power support.
4. Automobile electrification system: In the field of automobile electrification, VBFB19R07S can be used in the electric drive system of electric vehicles, such as motor controllers, battery management systems, etc.
5. Solar Inverter: In a solar inverter, this device can be used to convert the DC power output from the solar panel into AC power for household and industrial use.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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